STUDY OF INHOMOGENEITIES IN GaAs USING A SCANNING ELECTRON MICROSCOPE
- 1 January 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (1) , 16-18
- https://doi.org/10.1063/1.1652639
Abstract
A scanning electron microscope was used to observe the bulk electrovoltaic effect in GaAs devices. Displays showing the distribution of inhomogeneities of carrier concentration over an area of a sample of bulk or epitaxial GaAs were produced. A correlation was found between the device performance and the inhomogeneity distribution observed in the material.Keywords
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