Dependence of Threshold Currents on the Impurity Concentrations in Laser Diodes
- 1 April 1965
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (4) , 1499-1500
- https://doi.org/10.1063/1.1714347
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- EFFECT OF IMPURITY DISTRIBUTION ON SIMULTANEOUS LASER ACTION IN GaAs AT 0.84 AND 0.88 μApplied Physics Letters, 1964
- Light emission and electrical characteristics of epitaxial GaAs lasers and tunnel diodesSolid State Communications, 1964
- Absorption Data of Laser-Type GaAs at 300° and 77°KJournal of Applied Physics, 1964
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- Threshold Currents for Line Narrowing in GaAs Junction DiodesJournal of Applied Physics, 1963
- Dependence of Recombination Radiation on Current in GaAs DiodesJournal of Applied Physics, 1963
- Laser Conditions in SemiconductorsPhysica Status Solidi (b), 1961