Growth Mode of CeO2 on Si Surface
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Stress-induced amorphization of silicon crystal by mechanical scratchingPhysical Review Letters, 1992
- Atomic scale structure of microtwins in single crystal Si grown by lateral solid phase epitaxyJournal of Applied Physics, 1991
- Observation on laser-annealed silicon-on-insulator structures by cross-sectional transmission electron microscopyJournal of Applied Physics, 1987
- Precipitate and Defect Formation in Oxygen Implanted Silicon-on-Insulator MaterialMRS Proceedings, 1987
- Performance Advantages of Submicron Silicon-On-Insulator Devices for ULSIMRS Proceedings, 1987
- Silicon-to-silicon direct bonding methodJournal of Applied Physics, 1986
- Wafer bonding for silicon-on-insulator technologiesApplied Physics Letters, 1986
- Growth of single crystal epitaxial silicides on silicon by the use of template layersApplied Physics Letters, 1983
- Solid-phase lateral epitaxy of chemical-vapor-deposited amorphous silicon by furnace annealingJournal of Applied Physics, 1983
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978