Optical bistability at 980 nm in a strained InGaAs/GaAs multiple quantum well microcavity with resonant periodic nonlinearity
- 17 May 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (20) , 2489-2491
- https://doi.org/10.1063/1.109328
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Optical nonlinearities in strained-layer InGaAs/GaAs multiple quantum wellsApplied Physics Letters, 1992
- High contrast, submilliwatt power InGaAs/GaAs strained-layer multiple-quantum-well asymmetric reflection modulatorApplied Physics Letters, 1991
- Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterizationIEEE Journal of Quantum Electronics, 1991
- Electro-optical bistability in strained InxGa1−xAs/Al0.15Ga0.85As multiple quantum wellsApplied Physics Letters, 1990
- High contrast multiple quantum well optical bistable device with integrated Bragg reflectorsApplied Physics Letters, 1990
- Submilliamp threshold InGaAs-GaAs strained layer quantum-well laserIEEE Journal of Quantum Electronics, 1990
- Surface-emitting, multiple quantum well GaAs/AlGaAs laser with wavelength-resonant periodic gain mediumApplied Physics Letters, 1988
- Fabry-Perot multiple-quantum well index modulatorApplied Optics, 1988
- Reduction of lasing threshold current density by the lowering of valence band effective massJournal of Lightwave Technology, 1986
- Optical investigation of a new type of valence-band configuration in As-GaAs strained superlatticesPhysical Review B, 1985