High contrast, submilliwatt power InGaAs/GaAs strained-layer multiple-quantum-well asymmetric reflection modulator
- 16 December 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (25) , 3216-3218
- https://doi.org/10.1063/1.105736
Abstract
A high contrast, low power optical reflection modulator with an InGaAs/GaAs strained-layer multiple quantum well (MQW) nonlinear spacer is demonstrated. Taking advantage of large absorptive and dispersive nonlinearities near the exciton peak, on/off contrast ratios exceeding 29 dB are achieved with submilliwatt pump powers at room temperature.Keywords
This publication has 12 references indexed in Scilit:
- Many-body effects in the gain spectra of strained quantum wellsApplied Physics Letters, 1991
- Low-voltage multiple quantum well reflection modulator with on:off ratio > 100:1Electronics Letters, 1989
- Room-temperature pseudomorphic InxGa1−xAs/GaAs quantum well surface-emitting lasers at 0.94–1.0 μm wavelengthsApplied Physics Letters, 1989
- Optical studies of InxGa1−xAs/GaAs strained-layer quantum wellsApplied Physics Letters, 1989
- Optical Properties of (100) - and (111)-Oriented GaInAs/GaAs Strained-Layer SuperlatticesPhysical Review Letters, 1989
- Electrodispersive multiple quantum well modulatorApplied Physics Letters, 1988
- Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grown As/GaAs quantum wellsPhysical Review B, 1988
- Room-Temperature Optical Nonlinearities in GaAsPhysical Review Letters, 1986
- Optical investigation of a new type of valence-band configuration in As-GaAs strained superlatticesPhysical Review B, 1985
- Refractive Fabry-Perot bistability with linear absorption: Theory of operation and cavity optimizationIEEE Journal of Quantum Electronics, 1981