High-preformance diamond surface-channel field-effect transistors and their operation mechanism
- 1 March 1999
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 8 (2-5) , 927-933
- https://doi.org/10.1016/s0925-9635(98)00449-x
Abstract
No abstract availableKeywords
Funding Information
- Waseda University
- Ministry of Education, Culture, Sports, Science and Technology
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