High-performance metal-semiconductor field effect transistors from thin-film polycrystalline diamond
- 1 February 1998
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 7 (2-5) , 565-568
- https://doi.org/10.1016/s0925-9635(97)00273-2
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- A thin film diamond p-channel field-effect transistorApplied Physics Letters, 1997
- Electrically Isolated Metal-Semiconductor Field Effect Transistors and Logic Circuits on Homoepitaxial DiamondsJapanese Journal of Applied Physics, 1996
- Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurementsApplied Physics Letters, 1996
- Pulse-doped diamond p-channel metal semiconductor field-effect transistorIEEE Electron Device Letters, 1995
- Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamondsApplied Physics Letters, 1994
- Diamond devices made of epitaxial diamond filmsDiamond and Related Materials, 1992
- Fabrication of Metal-Insulator-Semiconductor Devices Using Polycrystalline Diamond FilmJapanese Journal of Applied Physics, 1991
- An ion-implanted diamond metal-insulator-semiconductor field-effect transistorIEEE Electron Device Letters, 1991
- Diamond MESFET using ultrashallow RTP boron dopingIEEE Electron Device Letters, 1991
- The nature of the acceptor centre in semiconducting diamondJournal of Physics C: Solid State Physics, 1971