A thin film diamond p-channel field-effect transistor
- 20 January 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (3) , 339-341
- https://doi.org/10.1063/1.118408
Abstract
A depletion-mode metal-insulator-semiconductor field-effect transistor has been fabricated from thin film polycrystalline diamond with a p-type (boron doped) channel and an insulating diamond gate. This device has been successfully operated at 300 °C displaying pinch off when in depletion and high levels of channel current modulation in enhancement. A transconductance value of 174 μS/mm has been measured, the highest reported value to date for this type of device.Keywords
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