Direct photochemical deposition of SiO2 from the Si2H6+O2 system
- 15 February 1984
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (4) , 1234-1236
- https://doi.org/10.1063/1.333172
Abstract
Silicon dioxide films have been prepared by the direct photolysis of disilane with oxygen at temperatures as low as 150 °C. The photochemical deposition rate at temperatures below 300 °C has an activation energy of 0.53 eV, which is appreciably lower than the activation energy of 0.96 eV obtained for the thermal chemical vapor deposition (CVD). The infrared absorption peaks due to the SiH and SiOSi stretching modes in the photo‐CVD SiO2 matrix always appear at higher wave numbers than those in thermal CVD films. This is interpreted in terms of the densification of the SiO2 network through photochemical reactions.This publication has 8 references indexed in Scilit:
- Silicon Thin-Film Formation by Direct Photochemical Decomposition of DisilaneJapanese Journal of Applied Physics, 1983
- Novel Amorphous Silicon Solar Cells Prepared by Photochemical Vapor DepositionJapanese Journal of Applied Physics, 1983
- Hydrogen in semi-insulating polycrystalline silicon filmsJournal of Applied Physics, 1980
- Relation of Si–H vibrational frequencies to surface bonding geometryJournal of Vacuum Science and Technology, 1979
- The Spectrum of Molecular OxygenJournal of Physical and Chemical Reference Data, 1972
- Control of the Deposition of Silicon Nitride Layers by 2537Å RadiationJournal of the Electrochemical Society, 1972
- On the Mechanism of the Deposition of Silica by Pyrolytic Decomposition of SilanesJournal of the Electrochemical Society, 1965
- Zur Kenntnis der SiO- und Si 2 O 3 -Phase in Dünnen SchichtenOptica Acta: International Journal of Optics, 1962