Postgrowth annealing effects of TiO2 thin films grown on InP substrate at low-temperature by metal-organic chemical-vapor deposition
- 15 April 1996
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (8) , 4459-4461
- https://doi.org/10.1063/1.361757
Abstract
The structural and electrical properties of titanium dioxide (TiO2) thin films grown on n‐type InP(100) substrate by low‐pressure metal‐organic chemical‐vapor deposition have been studied with postannealing. The thin films of TiO2 were deposited at a low temperature of 350 °C using titanium isopropoxide and oxygen. After a postgrowth annealing by the rapid thermal annealing method at a temperature of 850 °C for 15 s, the TiO2/InP structure of only the anatase phase with (101) and (200) peaks was observed by x‐ray diffraction analysis. No interface reaction between TiO2 and InP was detected by Auger electron spectroscopy depth profiling. From capacitance–voltage measurement of the Al/TiO2/n‐InP structure, the interface density of states at midgap energy and the dielectric constant were approximately low 1012 eV−1 cm−2 at midgap energy and about 50, respectively.This publication has 13 references indexed in Scilit:
- Structural and electrical properties of BaTiO3 grown on p-InP (100) by low-pressure metalorganic chemical vapor deposition at low temperatureApplied Physics Letters, 1994
- Optical and electrical properties of titanium dioxide films with a high magnitude dielectric constant grown on p-Si by metalorganic chemical vapor deposition at low temperatureApplied Physics Letters, 1994
- The interfacial layer formation of the Al2O3/Si structures grown by low-pressure metalorganic chemical vapor depositionJournal of Applied Physics, 1993
- Growth of γ-Al2O3 thin films on silicon by low pressure metal-organic chemical vapour depositionThin Solid Films, 1992
- Growth and characterization of Al2O3 insulator gate on p-InP and p-Si by metallorganic chemical vapour deposition at low temperaturesJournal of Materials Science, 1992
- Research of SiO2/InP structure prepared by photo-CVDJournal of Electronic Materials, 1990
- Electronic Properties of the Interface between Si and TiO2 Deposited at Very Low TemperaturesJapanese Journal of Applied Physics, 1986
- Physical and chemical aspects in the application of thin films on optical elementsApplied Optics, 1984
- Chemical vapour deposition of TiO2 film using an organometallic process and its photoelectrochemical behaviourJournal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 1981
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962