A 86 to 108 GHz Amplifier in 90 nm CMOS
- 7 February 2008
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 18 (2) , 124-126
- https://doi.org/10.1109/lmwc.2007.915132
Abstract
This letter presents a CMOS amplifier with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS amplifier reported to date.Keywords
This publication has 5 references indexed in Scilit:
- A 71–80 GHz Amplifier Using 0.13-$\mu{\hbox{m}}$ CMOS TechnologyIEEE Microwave and Wireless Components Letters, 2007
- Low-Power mm-Wave Components up to 104GHz in 90nm CMOSIEEE International Solid-State Circuits Conference, 2007
- A miniature Q-band low noise amplifier using 0.13-μm CMOS technologyIEEE Microwave and Wireless Components Letters, 2006
- Millimeter-wave CMOS designIEEE Journal of Solid-State Circuits, 2005
- Simulation and design of lossy transmission lines in a thin-film multichip packageIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1990