Experimental observation of a minority electron mobility enhancement in degenerately doped p-type GaAs
- 26 July 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (4) , 536-538
- https://doi.org/10.1063/1.109997
Abstract
The variation of minority electron mobility with doping density in p+‐GaAs has been measured with the zero‐field time‐of‐flight technique. The results from a series of nine GaAs films doped between 1×1018 and 8×1019 cm−3 show the mobility decreasing from 1950 cm2 V−1 s−1 at 1×1018 cm−3 to 1370 cm2 V−1 s−1 at 9×1018 cm−3. For the doping range 9×1018–8×1019 cm−3, the decreasing trend in mobility is reversed. The measured mobility of 3710 cm2 V−1 s−1 at 8×1019 cm−3 is about three times higher than the measured value at 9×1018 cm−3. These results confirm and extend recent transistor‐based measurements and are in accord with recent theoretical predictions that attribute the increase in minority electron mobility in p+‐GaAs to reductions in plasmon and carrier‐carrier scattering at high hole densities.Keywords
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