Minority electron mobility and lifetime in the p+GaAs base of AlGaAs/GaAs heterojunction bipolar transistors
- 22 February 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (8) , 861-863
- https://doi.org/10.1063/1.108547
Abstract
AlGaAs/GaAs heterojunction bipolar transistors with different base doping concentrations grown by gas source molecular beam epitaxy were fabricated and characterized at dc and high frequency. Three different base doping concentrations; 5×1018, 1×1019, and 5×1019 cm−3 doped with Be were used for the characterization with the same structural and process parameters, including 0.2 μm base width. Minority electron mobilities in heavily doped p type were measured as 1.1×103, 1.3×103, and 3×103 cm2 V/s for 5×1018, 1×1019, and 5×1019 cm−3, respectively, by using the current gain cutoff frequency (fT) which agrees well with theoretical predictions in heavily doped p‐type GaAs. Combining dc and high frequency measurements, electron lifetimes of 1.2×10−9, 5.5×10−10, and 2×10−11 s have been obtained for these three dopings, respectively.Keywords
This publication has 11 references indexed in Scilit:
- Comparative study of minority electron properties in p+-GaAs doped with beryllium and carbonApplied Physics Letters, 1992
- Accurate measurement technique for base transit time in heterojunction bipolar transistorsElectronics Letters, 1991
- Majority and minority electron and hole mobilities in heavily doped GaAsJournal of Applied Physics, 1991
- Temperature dependence of minority-carrier mobility and recombination time in p-type GaAsApplied Physics Letters, 1991
- Zero-Field Time-of-Flight Measurements of Electron Diffusion in P+-GaAsJapanese Journal of Applied Physics, 1991
- Velocity electric field relationship for minority electrons in highly doped p-GaAsApplied Physics Letters, 1990
- Material properties of p-type GaAs at large dopingsApplied Physics Letters, 1990
- Electron mobility in p-type GaAsApplied Physics Letters, 1988
- Super-gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter edge-thinning designApplied Physics Letters, 1985
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982