Homogeneous (Ga,Al)P alloy grown by the temperature difference method

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Abstract
A method was developed to grow homogeneous (Ga,Al)P alloy using a temperatue difference liquid phase epitaxial growth technique. In this method (Ga,Al)P polycrystals were prepared at 1000 °C prior to the growth of (Ga,Al)P alloy at 800 °C, which acted as the Al source to maintain the alloy composition constant during the growth. Electron probe microanalysis showed that the grown alloy was uniform within 0.01 mole fraction. It was also possible to control the alloy composition by this growth technique. Measurements of photoluminescence of the grown layer and electroluminescence of Zn-diffused diode revealed the grown alloy was of high quality. Observed edge emission energy indicated that the band gap varied with alloy composition. The edge band emission spectra with fine structure were observed at 77 K.