Electroluminescence in AlxGa1−xP Diodes Prepared by Liquid-Phase Epitaxy
- 1 October 1968
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (11) , 5339-5340
- https://doi.org/10.1063/1.1655973
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- The effect of the donor concentration on the optical efficiency of solution-grown GaP diodesSolid-State Electronics, 1968
- Preparation and Optical Properties of AlxGa1−xPJournal of Applied Physics, 1968
- EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1-xAlxAs p-n JUNCTIONS GROWN BY LIQUID-PHASE EPITAXYApplied Physics Letters, 1967
- Intrinsic Absorption-Edge Spectrum of Gallium PhosphidePhysical Review B, 1966
- Preparation and Properties of Solution-Grown Epitaxial p—n Junctions in GaPJournal of Applied Physics, 1966
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review Letters, 1965
- Über das AlPJournal of Physics and Chemistry of Solids, 1960