Hot carrier transient response in bulk III-V compounds
- 15 July 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (2) , 375-381
- https://doi.org/10.1063/1.333975
Abstract
A theory of transport of hot carriers in bulk III-V compounds is outlined. Equilibrium calculations are performed which show fair agreement with earlier Monte Carlo calculations and with experiment. Transient response calculations indicate velocity overshoot and it is seen that the mechanism primarily responsible for overshoot in these materials is repopulation, in contrast to the relaxation time mechanism observed in silicon. Calculations are performed for GaAs and other III-V compounds.This publication has 11 references indexed in Scilit:
- Transient velocity characteristics of electrons in GaAs with Γ-L-X conduction band orderingJournal of Applied Physics, 1978
- Velocity-field characteristics of GaAs with Γc6-L c6-X c6 conduction-band orderingJournal of Applied Physics, 1977
- Transient and steady-state electron transport properties of GaAs and InPJournal of Applied Physics, 1977
- GaAs lower conduction-band minima: Ordering and propertiesPhysical Review B, 1976
- Ordering and Absolute Energies of theandConduction Band Minima in GaAsPhysical Review Letters, 1976
- High-field transport in wide-band-gap semiconductorsPhysical Review B, 1975
- High-field transport in indium phosphideElectronics Letters, 1973
- ‘Nearly instantaneous’ digital compandor for transmitting six sound-programme signals in a 2.048 Mbit/s multiplexElectronics Letters, 1973
- The intervalley transfer mechanism of negative resistivity in bulk semiconductorsProceedings of the Physical Society, 1965
- The influence of interelectronic collisions on conduction and breakdown in polar crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1958