Growth of epitaxial germanium-silicon heterostructures by chemical vapour deposition
- 1 February 1993
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 18 (1) , 22-51
- https://doi.org/10.1016/0921-5107(93)90110-9
Abstract
No abstract availableThis publication has 147 references indexed in Scilit:
- Investigation on the growth rate enhancement by Ge during SiGe alloy deposition by chemical vapor depositionApplied Physics Letters, 1992
- Electron resonant tunneling in Si/SiGe double barrier diodesApplied Physics Letters, 1991
- The adsorption of hydrogen, digermane, and disilane on Ge(111): a multiple internal reflection infrared spectroscopy studyJournal of Electron Spectroscopy and Related Phenomena, 1990
- Decomposition of silane on Si(111)-(7×7) and Si(100)-(2×1) surfaces below 500 °CThe Journal of Chemical Physics, 1990
- Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxyThin Solid Films, 1989
- Oxidation studies of SiGeJournal of Applied Physics, 1989
- Silane pyrolysis rates for the modeling of chemical vapor depositionJournal of Applied Physics, 1987
- Measurement of the band gap of GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxyApplied Physics Letters, 1984
- Rate-determining reactions and surface species in CVD of silicon: II. The SiH2Cl2-H2-N2-HCL systemJournal of Crystal Growth, 1980