Stress-induced defect migration in InP/InGaAsP double-heterostructure wafers
- 30 June 1982
- journal article
- Published by Elsevier in Materials Letters
- Vol. 1 (1) , 19-21
- https://doi.org/10.1016/0167-577x(82)90032-5
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Imaging of dislocations in InP using transmission cathodoluminescenceApplied Physics Letters, 1979