Lattice defect structure of degraded InGaAsP-InP double-heterostructure lasers
- 1 January 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (1) , 16-17
- https://doi.org/10.1063/1.92917
Abstract
Lattice defect structure of degraded InGaAsP lasers has been investigated by scanning and transmission electron microscopy. It is found that although dislocation climb motion in InGaAsP lasers is slow, slip dislocations parallel to the stripe cause rapid degradation of the lasers.Keywords
This publication has 14 references indexed in Scilit:
- Transverse mode stabilized InGaAsP/InP (λ = 1.3 µm) piano-convex waveguide lasersIEEE Journal of Quantum Electronics, 1981
- Reliability of high radiance InGaAsP/InP LED́s operating in the 1.2-1.3 µm wavelengthIEEE Journal of Quantum Electronics, 1981
- Transmission electron microscope observation of dark-spot defects in InGaAsP/InP double-heterostructure light-emitting diodes aged at high temperatureApplied Physics Letters, 1980
- The mechanism of optically induced degradation in InP/In1−xGaxAsyP1−y heterostructuresApplied Physics Letters, 1979
- Degradations of Optically-Pumped GaAlAs Double Heterostructures at Elevated TemperaturesJapanese Journal of Applied Physics, 1979
- Tem study of dark line defect growth from dislocation clusters in (GaAl)As-GaAs double heterostructure lasersJournal of Electronic Materials, 1979
- Nature of 〈110〉 dark-line defects in degraded (GaAl)As-GaAs double-heterostructure lasersApplied Physics Letters, 1977
- 1500-h continuous cw operation of double-heterostructure GaInAsP/InP lasersApplied Physics Letters, 1977
- Defect structure of degraded heterojunction GaAlAs−GaAs lasersApplied Physics Letters, 1975
- Observation of Recombination-Enhanced Defect Reactions in SemiconductorsPhysical Review Letters, 1974