Arsenic growth on the gallium arsenide surface during oxidation
- 1 January 1987
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 48 (12) , 1207-1212
- https://doi.org/10.1016/0022-3697(87)90007-2
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Interfacial Arsenic Growth in Anodic Oxide / GaAs StructuresJournal of the Electrochemical Society, 1981
- Raman scattering from anodic oxide-GaAs interfacesApplied Physics Letters, 1979
- Oxide layers on GaAs prepared by thermal, anodic and plasma oxidation: In-depth profiles and annealing effectsThin Solid Films, 1979
- Oxide layers on III–V compound semiconductorsThin Solid Films, 1976
- Diffusion in Compound SemiconductorsPhysical Review B, 1961