Trapping of Au in Si during pulsed laser irradiation: A comparison with ion beam induced segregation
- 19 December 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (25) , 2486-2488
- https://doi.org/10.1063/1.100221
Abstract
Liquid phase nonequilibrium segregation and trapping of Au in Si induced by Q-switched laser irradiation are reported. Depending on the incident laser energy density, irradiation results in either amorphization or recrystallization of a near surface layer. In the latter case, at interface velocities of 9 m/s, the segregation coefficient is 0.1±0.02 and Au is trapped in near-substitutional lattice sites at concentrations of 0.5 at. %. These results are compared with recent data on solid phase, ion beam induced segregation, where Au at the amorphous-crystal interface is trapped on nonunique lattice sites.Keywords
This publication has 10 references indexed in Scilit:
- Radiation-enhanced diffusion of Au in amorphous SiApplied Physics Letters, 1988
- Twin formation and Au segregation during ion-beam-induced epitaxy of amorphous SiApplied Physics Letters, 1988
- Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous SiPhysical Review Letters, 1988
- Diffusion of implanted impurities in amorphous SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Si liquid-amorphous transition and impurity segregationApplied Physics Letters, 1985
- Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser IrradiationPhysical Review Letters, 1983
- Diffusion coefficient of 195Au in the liquid Au0.81Si0.19 alloyJournal of Applied Physics, 1982
- Dependence of trapping and segregation of indium in silicon on the velocity of the liquid-solid interfaceApplied Physics Letters, 1980
- Time-resolved reflectivity of ion-implanted silicon during laser annealingApplied Physics Letters, 1978
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960