Impact ionization thresholds in semiconductors
- 20 August 1973
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 6 (16) , 2573-2585
- https://doi.org/10.1088/0022-3719/6/16/011
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Threshold energy for electron-hole pair production in a semiconductorPhysica Status Solidi (b), 1972
- Threshold Energies for Electron-Hole Pair Production by Impact Ionization in SemiconductorsPhysical Review B, 1972
- Energy Bands and the Soft-X-Ray Absorption in SiPhysical Review Letters, 1971
- Transition probability of impact ionization in siliconJournal of Physics and Chemistry of Solids, 1967
- Threshold Energy for Avalanche Multiplication in SemiconductorsJournal of Applied Physics, 1966
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Impact Ionization Threshold in SemiconductorsProceedings of the Physical Society, 1963
- Impact Ionization and Quantum Efficiency in SiliconProceedings of the Physical Society, 1963
- A note on the theory of the quantum efficiency of germanium and siliconCzechoslovak Journal of Physics, 1958
- On the theory of the spectral dependence of the quantum efficiency of homopolar crystalsCzechoslovak Journal of Physics, 1957