The dependence of bulk defects on the axial temperature gradient of silicon crystals during Czochralski growth
- 1 June 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 151 (3-4) , 273-277
- https://doi.org/10.1016/0022-0248(95)00063-1
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
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