Interband transitions of ZnTe-ZnSe superlattices prepared on GaAs (100) by hot wall epitaxy
- 1 April 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (7) , 2838-2842
- https://doi.org/10.1063/1.342722
Abstract
Photoluminescence measurements of ZnTe-ZnSe superlattices prepared on GaAs (100) substrates by hot wall epitaxy method were carried out. Free- and bound-exciton lines due to the interband transitions of the superlattices were observed for the first time. Absorption spectra of the reflection and the transmission modes were measured to confirm the exciton lines. A theoretical calculation based on the envelope function scheme of superlattices is presented to explain the structure dependence of the photoluminescence data, taking strain effects into account.This publication has 17 references indexed in Scilit:
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