120 °C fabrication technology for a-Si:H thin film transistors on flexible polyimide substrates
- 1 March 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 18 (2) , 780-782
- https://doi.org/10.1116/1.582179
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- a-Si:H TFTs Made on Polyimide Foil by PE-CVD at 150°CMRS Proceedings, 1998
- Process Integration of A-Si:H Schottky Diode and thin Film Transistor for Low-Energy X-Ray Imaging ApplicationsMRS Proceedings, 1998
- Reaction Processes for Low Temperature (<150°C) Plasma Enhanced Deposition of Hydrogenated Amorphous Silicon Thin Film Transistors on Transparent Plastic SubstratesMRS Proceedings, 1998
- Dominant monohydride bonding in hydrogenated amorphous silicon thin films formed by plasma enhanced chemical vapor deposition at room temperatureJournal of Vacuum Science & Technology A, 1997
- Chemical influence of inert gas on the thin film stress in plasma-enhanced chemical vapor deposited a-SiN: H filmsJournal of Materials Research, 1996
- Improvement of Electronic Transport Characteristics of Amorphous Silicon by Hydrogen Dilution of SilaneJapanese Journal of Applied Physics, 1995
- Density of the gap states in undoped and doped glow discharge a-Si:HSolar Energy Materials, 1983
- Hydrogen-related memory traps in thin silicon nitride filmsJournal of Vacuum Science & Technology A, 1983
- Optical Properties and Electronic Structure of Amorphous GermaniumPhysica Status Solidi (b), 1966