Characterization of CuAlS2 Films Grown by Molecular Beam Epitaxy
- 1 October 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (10A) , L1396
- https://doi.org/10.1143/jjap.31.l1396
Abstract
Undoped and As-doped CuAlS2 films have been grown on GaAs(100) substrates by molecular beam epitaxy, and their optical and electrical properties have been characterized. X-ray diffraction patterns show that the films grow epitaxially with the c-axis perpendicular to the substrate surface. Both undoped and As-doped CuAlS2 films have exhibited a near-band-edge emission around 3.4 eV with accompanying deep-level-related emissions at 77 K. An As-doped CuAlS2 film exhibits p-type conductivity with the lowest resistivity of 1 Ω·cm and the carrier concentration of 5×1017 cm-3.Keywords
This publication has 8 references indexed in Scilit:
- Growth and characterization of Cu-Al-Se system by MBEJournal of Crystal Growth, 1991
- Cathodoluminescence and electrical properties of CuAlS2Physica Status Solidi (a), 1989
- MOVPE growth and characterization of I-III-VI2 Chalcopyrite compoundsJournal of Crystal Growth, 1988
- Electrical properties of cadmium and Zinc doped CuAlS2Physica Status Solidi (a), 1988
- Dependence of Energy Gap on x in CuAlxGa1-xS2 Mixed Crystal SystemJapanese Journal of Applied Physics, 1988
- The Syntheses, Electrical and Optical Properties of Doped and Undoped CuAlS2Journal of the Electrochemical Society, 1974
- Room-Temperature Electrical Properties of Ten I-III-VI2 SemiconductorsJournal of Applied Physics, 1972
- Preparation and properties of single crystal CuAlS2 and CuAlSe2Journal of Physics and Chemistry of Solids, 1969