Study of Cu diffusion in an Al–1wt.%Si–0.5wt.%Cu bond pad with an Al–1wt.%Si bond wire attached using scanning electron microscopy
- 1 March 1998
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 38 (3) , 309-315
- https://doi.org/10.1016/s0026-2714(97)00051-6
Abstract
No abstract availableKeywords
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