The Effect of Cu Alloying on Al Alloy Thin Films: Microstructural Mechanisms That Enhance Electromigration Resistance
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Microstructural Aspects of Interconnect FailureMRS Proceedings, 1992
- A model for the effect of line width and mechanical strength on electromigration failure of interconnects with “near-bamboo” grain structuresJournal of Materials Research, 1991
- Microstructural Analysis of Electromigration-Induced Voids and HillocksMRS Proceedings, 1991
- Grain Boundary Chemistry in Al-Cu Metallizations as Determined by Analytical Electron MicroscopyMRS Proceedings, 1991
- The measurement and calculation of the X‐ray spatial resolution obtained in the analytical electron microscopeJournal of Microscopy, 1990
- Reduced aluminium electromigration in future integrated circuits — A problem of test procedure and threshold mechanismsThin Solid Films, 1989
- A consistent definition of probe size and spatial resolution in the analytical electron microscopeJournal of Microscopy, 1987
- Electromigration mechanisms in aluminum linesSolid-State Electronics, 1985
- Anelastic Relaxation in Crystalline SolidsJournal of Applied Mechanics, 1975
- Growth of grain boundary precipitates in Al-4% Cu by interfacial diffusionActa Metallurgica, 1968