Reduced aluminium electromigration in future integrated circuits — A problem of test procedure and threshold mechanisms
- 1 August 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 175, 29-36
- https://doi.org/10.1016/0040-6090(89)90804-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Effects of vanadium and chromium on aluminum electromigrationJournal of Applied Physics, 1987
- Bulk electromigration reliability tests of large-grained aluminum lines with regard to semiconductor contactsSolid-State Electronics, 1986
- Characteristics of Electromigration in Aluminum Interconnect Lines for Integrated CircuitsMRS Proceedings, 1986
- Electromigration mechanisms in aluminum linesSolid-State Electronics, 1985
- Electromigration threshold in aluminum filmsSolid-State Electronics, 1985
- Lifetime and drift velocity analysis for electromigration in sputtered Al films, multilayers, and alloysSolid-State Electronics, 1983
- Electromigration measuring techniques for grain boundary diffusion activation energy in aluminumSolid-State Electronics, 1981
- Activation energies for the different electromigration mechanisms in aluminumSolid-State Electronics, 1981
- Copper electromigration in aluminumJournal of Applied Physics, 1977
- Electromigration in thin aluminum films on titanium nitrideJournal of Applied Physics, 1976