Observation of the Huygens-principle growth mechanism in sputtered W/Si multilayers
- 10 December 1996
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 36 (8) , 565-570
- https://doi.org/10.1209/epl/i1996-00270-x
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Characterization of interface roughness in W/Si multilayers by high resolution diffuse X-ray scatteringPhysica B: Condensed Matter, 1996
- Fractal Concepts in Surface GrowthPublished by Cambridge University Press (CUP) ,1995
- Kinetic Roughness of Amorphous Multilayers Studied by Diffuse X-Ray ScatteringPhysical Review Letters, 1994
- Interfacial roughness of sputtered multilayers: Nb/SiPhysical Review B, 1993
- Stochastic model for thin film growth and erosionApplied Physics Letters, 1993
- Studies of Growth Instabilities and Roughening in Sputtered NbN Films Using a Multilayer Decoration TechniqueEurophysics Letters, 1992
- Scaling theory for the growth of amorphous filmsPhysical Review Letters, 1990
- Dynamic Scaling of Growing InterfacesPhysical Review Letters, 1986
- Geometry of thin-film morphologyJournal of Applied Physics, 1985
- The surface statistics of a granular aggregateProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1982