Correlation of G/sub m/ degradation of submicrometer MOSFETs with refractive index and mechanical stress of encapsulation materials
- 1 March 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (3) , 542-547
- https://doi.org/10.1109/16.19966
Abstract
No abstract availableKeywords
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