Silicon diffusion into AlxGa1−xAs (x=0–0.4) from a sputtered silicon film
- 2 February 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (5) , 265-266
- https://doi.org/10.1063/1.98220
Abstract
Silicon diffusion into AlxGa1−xAs (x=0–0.4) from a sputtered Si film is described. It is shown that both the diffusion rate and the surface concentration of Si decrease with increasing Al mole fraction. The diffusion behavior of Si in AlxGa1−xAs is discussed in terms of the binding energy of the Al–As bond and mixed crystal disorder.Keywords
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