Hillock formation in InP epitaxial layers: A mechanism based on dislocation/stacking fault interactions
- 1 July 1990
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 62 (1) , 103-114
- https://doi.org/10.1080/01418619008244338
Abstract
Transmission and scanning electron microscopy have been used to study mechanisms of hillock growth in InP homo-epitaxial layers grown by the hydride VPE technique. Stacking faults in conjunction with dislocations were found to be the main sources of hillock formation in such epilayers. The stacking fault/dislocation interaction has been considered theoretically to understand better the details of the involved mechanisms of dislocation aggregation and pinning. According to the Burton-Cabrera-Frank mechanism the local concentration of dislocations results in a higher growth speed in these areas via spiral growth.Keywords
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