Correlation between Surface Morphology and Electrical Properties of GaAs Grown by Metalorganic Chemical Vapor Deposition

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Abstract
Surface morphology, including growth pyramids and rough surface, formed on MOCVD grown GaAs epitaxial layers has been investigated for different ratios of As to Ga atoms during growth. Such a morphology is correlated with the electrical property of the film. More specifically, rough surface textures together with p-type conductivity of the undoped sample result simultaneously for smaller As to Ga ratios. The effect of the As to Ga ratio on surface morphology and conductivity-type conversion is different for different orientations of substrates. This fact and the formation of the growth pyramids are explained on the basis of a local deficiency of As at the growth surface.