A comment on the Hall effect in phosphorus-doped silicon
- 1 May 1978
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 37 (5) , 649-651
- https://doi.org/10.1080/01418637808226461
Abstract
An examination of the Hall data of Yamanouchi, Mizuguchi and Sasaki (1967) in Si : P is made and the results shown to be compatible with the existence of a Hubbard pseudogap in just-metallic Si : P.Keywords
This publication has 11 references indexed in Scilit:
- The dopant density and temperature dependence of electron mobility and resistivity in n-type siliconSolid-State Electronics, 1977
- Magnetic properties of electrons and holes in metallic Si:P and Si:BPhysical Review B, 1974
- Relationship between resistivity and phosphorus concentration in siliconJournal of Applied Physics, 1974
- NMR Study on Heavily Doped Silicon. IJournal of the Physics Society Japan, 1974
- Absolute Spin Susceptibilities and Other ESR Parameters of Heavily Doped-Type Silicon. II. A Unified TreatmentPhysical Review B, 1973
- Hall conductivity of amorphous semiconductors in the random phase modelJournal of Non-Crystalline Solids, 1971
- Hall scattering constant in n‐type siliconPhysica Status Solidi (b), 1971
- Coefficient de Hall et résistivité du germanium dopé à l'arsenic en fonction de la températureJournal de Physique, 1967
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962
- The Infra-red Faraday Effect in GermaniumProceedings of the Physical Society, 1961