Monolithically Integrated SiGe Push-Push Oscillators in the Frequency Range 50-190 GHz
- 1 August 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 19437439,p. 26-30
- https://doi.org/10.1109/isssta.2006.311727
Abstract
In this paper we present several monolithically integrated push-push oscillators in the frequency range from 47 GHz to 190 GHz. The MMICs are fabricated in a production near SiGe:C bipolar technology developed by Infineon Technologies AG. The transistors show a maximum transit frequency of fT=200 GHz and a maximum frequency of oscillation fmax=275 GHz. The passive circuitry is realized using integrated transmission-line components, integrated spiral inductors, MIM-capacitors and TaN resistors. The frequency of the output signal of the oscillators can be tuned either by varying the bias voltage of the whole oscillator circuit or using the capacitance variation of a base collector junction as a tuning varactor. Some of the oscillators show excellent phase noise behavior, especially the 190 GHz oscillator gives a world record in output power and phase noise for HBT-oscillatorsKeywords
This publication has 28 references indexed in Scilit:
- A 90-GHz Voltage-Controlled Oscillator with a 2.2-GHz Tuning Range in a 130-nm CMOS TechnologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A 47 GHz monolithically integrated SiGe push-push oscillatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A fully integrated 70 GHz SiGe low phase noise push-push oscillatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- 60 GHz VCO with wideband tuning range fabricated on VLSI SOI CMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- V-band and W-band SiGe bipolar low-noise amplifiers and voltage-controlled oscillatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technologyIEEE Journal of Solid-State Circuits, 2004
- Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive Radar systems and applications around 100 GHzIEEE Journal of Solid-State Circuits, 2004
- A monolithic integrated 150 GHz SiGe HBT push-push VCO with simultaneous differential V-band outputPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTsIEEE Transactions on Microwave Theory and Techniques, 2003
- W-band HEMT-oscillator MMICs using subharmonic injection lockingIEEE Transactions on Microwave Theory and Techniques, 2000