The electrical properties of zinc in silicon
- 1 February 1990
- journal article
- solids and-materials
- Published by Springer Nature in Applied Physics A
- Vol. 50 (2) , 151-156
- https://doi.org/10.1007/bf00343410
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Deep Level Transient Fourier Spectroscopy (DLTFS)—A technique for the analysis of deep level propertiesPublished by Elsevier ,2002
- Störstellenreaktionen in den Randschichtbereichen von Si-Kristallen mit Zn- und Pt-DotierungPhysica Status Solidi (a), 1987
- Electron capture at the two acceptor levels of a zinc center in siliconPhysical Review B, 1984
- Deep Level Fourier Spectroscopy for Determination of Deep Level ParametersJapanese Journal of Applied Physics, 1982
- Space-charge spectroscopy in semiconductorsPublished by Springer Nature ,1979
- Photoionization cross sections of holes at zinc centers in siliconJournal of Applied Physics, 1973
- Thermal ionization rates and energies of holes at the double acceptor zinc centers in siliconPhysica Status Solidi (a), 1972
- Photoelectronic Properties of Zinc Impurity in SiliconPhysical Review B, 1972
- Double-Acceptor Behavior of Zinc in SiliconPhysical Review B, 1957
- Diffusion and Electrical Behavior of Zinc in SiliconPhysical Review B, 1957