Growth of high density self-organized (In,Ga)As quantum dots with ultranarrow photoluminescence linewidths using buried In(Ga,Al)As stressor dots

High density InAs and ${\mathrm{In}}_{\mathrm{0.4}}{\mathrm{Ga}}_{\mathrm{0.6}}\mathrm{As}$ dots were grown by molecular beam epitaxy on buried ${\mathrm{In}}_{\mathrm{0.4}}{\mathrm{Al}}_{\mathrm{0.6}}\mathrm{As}$ and ${\mathrm{In}}_{\mathrm{0.4}}{\mathrm{Ga}}_{\mathrm{0.3}}{\mathrm{Al}}_{\mathrm{0.3}}\mathrm{As}$ stressor dots, respectively. Selective radiative recombination was achieved by engineering the band gap of the dots. Structural and luminescence measurements reveal increased size uniformity in the active region dots along with an increase in the dot density. A narrow photoluminescence linewidth of 19 meV was measured at T=17 K.