50 mW CW-operated single-mode surface-emitting AlGaAs lasers with 45 degrees total reflection mirrors
- 1 July 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (7) , 698-700
- https://doi.org/10.1109/68.145242
Abstract
The authors report on the fabrication and testing of surface-emitting AlGaAs 3.5 mu m ridge lasers with etched mirrors and 45 degrees internal deflectors. The 45 degrees mirror coupling coefficient and the resulting threshold current penalty have been analyzed theoretically and experimentally. A surface-emitted optical power of 50 mW CW at 26 mA threshold current and external differential efficiency of 57% has been achieved in lateral fundamental-mode operation. The optical power density of 14 mW CW per micrometer ridge width is the highest reported to date and produces two-dimensional surface-emitting laser arrays of diffraction-limited beam quality suitable for optical storage applications.Keywords
This publication has 11 references indexed in Scilit:
- Monolithic two-dimensional surface-emitting diode laser arrays mounted in the junction-down configurationApplied Physics Letters, 1991
- Low-threshold InGaAs/GaAs strained-layer ridge waveguide surface emitting lasers with two 45° angle etched internal total reflection mirrorsApplied Physics Letters, 1991
- High power cw operation of GaAs/GaAlAs surface-emitting lasers mounted in the junction-up configurationApplied Physics Letters, 1991
- Monolithic two-dimensional surface-emitting strained-layer InGaAs/AlGaAs and AlInGaAs/AlGaAs diode laser arrays with over 50% differential quantum efficienciesApplied Physics Letters, 1991
- Very high-power (425 mW) AlGaAs SQW-GRINSCH ridge laser with frequency-doubled output (41 mW at 428 nm)IEEE Journal of Quantum Electronics, 1991
- Pseudomorphic InyGa1−yAs/GaAs/AlxGa1−xAs single quantum well surface-emitting lasers with integrated 45° beam deflectorsApplied Physics Letters, 1991
- Folded-cavity transverse junction stripe surface-emitting laserApplied Physics Letters, 1989
- Surface-emitting GaAs/AlGaAs lasers with dry-etched 45° total reflection mirrorsApplied Physics Letters, 1989
- Bidirectional beam propagation methodElectronics Letters, 1988
- Phase-locked operation of a grating-surface-emitting diode laser arrayApplied Physics Letters, 1987