Low-threshold InGaAs/GaAs strained-layer ridge waveguide surface emitting lasers with two 45° angle etched internal total reflection mirrors

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Abstract
A new type of in-plane surface emitting laser structure with two 45° mirrors has been demonstrated. The device is a ridge waveguide laser with total reflection mirrors etched at 45° to the plane of the active layer, having an epitaxially grown distributed Bragg reflector. Continuous-wave threshold current as low as 10 mA with 12% external differential quantum efficiency is achieved on a 5-μm-wide, 400-μm-long device.