Surface-emitting GaAs/AlGaAs lasers with dry-etched 45° total reflection mirrors
- 12 June 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (24) , 2389-2391
- https://doi.org/10.1063/1.101087
Abstract
Surface-emitting GaAs/AlGaAs lasers with 45° total reflection mirrors have been successfully produced using a 45° tilted reactive ion beam etching technique. The ratio of surface-emitted light output power to edge-emitted light output power was obtained at values as high as 77%. The total reflection mirror was formed within 1° of the desired precise 45° angle. This type of surface-emitting laser is promising for optoelectronic integrated circuits because of the simplicity of its structure and fabrication.Keywords
This publication has 10 references indexed in Scilit:
- Low threshold current surface emitting AlGaAs/GaAs laser with 45° metallised reflectorElectronics Letters, 1988
- Monolithic GaAs/AlGaAs diode laser/deflector devices for light emission normal to the surfaceApplied Physics Letters, 1986
- Surface-emitting GaAlAs/GaAs laser with etched mirrorsElectronics Letters, 1986
- Surface-emitting GaInAsP/InP laser with low threshold current and high efficiencyApplied Physics Letters, 1985
- GaAs and AlGaAs anisotropic fine pattern etching using a new reactive ion beam etching systemJournal of Vacuum Science & Technology B, 1985
- Room-temperature pulsed oscillation of GaAlAs/GaAs surface emitting injection laserApplied Physics Letters, 1984
- Lasing characteristics of improved GaInAsP/InP surface emitting injection lasersElectronics Letters, 1983
- New 1.5 μm wavelength GaInAsp/InP distributed feedback laserElectronics Letters, 1982
- Semiconductor laser to single-mode fiber couplerApplied Optics, 1979
- A novel double-heterostructure p-n-junction laserApplied Physics Letters, 1977