Recombination mechanism in heavily doped silicon
- 31 July 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (7) , 665-667
- https://doi.org/10.1016/0038-1101(82)90069-7
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Phonon-assisted Auger recombination in Si with direct calculation of the overlap integralsSolid State Communications, 1980
- Measurement of heavy doping parameters in silicon by electron-beam-induced currentIEEE Transactions on Electron Devices, 1980
- Measurement of the minority-carrier transport parameters in heavily doped siliconIEEE Transactions on Electron Devices, 1980
- The temperature dependence of band-to-band Auger recombination in siliconApplied Physics Letters, 1979
- Carrier recombination through donors/acceptors in heavily doped siliconApplied Physics Letters, 1979
- Phonon-assisted auger recombination in indirect gap semiconductorsPhysica Status Solidi (a), 1978
- Auger coefficients for highly doped and highly excited siliconApplied Physics Letters, 1977
- A formalism for the indirect Auger effect. IProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1976
- Auger-rekombination in SiSolid State Communications, 1973
- Band-to-band auger recombination in indirect gap semiconductorsPhysica Status Solidi (a), 1971