The temperature dependence of band-to-band Auger recombination in silicon
- 15 November 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (10) , 776-777
- https://doi.org/10.1063/1.90974
Abstract
The Auger recombination coefficient has been determined from the decay kinetics of highly excited silicon. It was found to be proportional to T0.6, increasing from 3.0×10−31 to 4.6×10−31 cm6s−1 in the temperature interval 195–372 K.Keywords
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