Optical properties of InAs quantum dots in a Si matrix
- 18 March 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (12) , 1701-1703
- https://doi.org/10.1063/1.123660
Abstract
We investigate the optical properties of nanoscale InAs quantum dots (QDs) in a Si matrix. At a growth temperature of 400 °C, the deposition of 7 ML InAs leads to the formation of coherent islands with dimensions in the 2–4 nm range. A luminescence band in the 1.3 μm region found exclusively for samples with such InAs QDs exhibits a pronounced excitation density dependence of the peak position and a decay time of 440 ns. The optical properties suggest an indirect type II transition for InAs/Si QDs. The electronic structure of InAs/Si QDs is discussed in view of available band offset information.Keywords
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