Interface studies of the MOS-structure by transfer-admittance measurements

This publication has 17 references indexed in Scilit:

• The scattering of electrons by surface oxide charges and by lattice vibrations at the silicon-silicon dioxide interface
  Surface Science, 1972
• The influence of dielectric charge on the hole field-effect mobility in silicon inversion layers
  Physics Letters A, 1972
• Transport Properties of Electrons in Inverted Silicon Surfaces
  Physical Review B, 1968
• CONTRIBUTIONS OF SURFACE STATES TO MOS IMPEDANCE
  Applied Physics Letters, 1967
• EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS
  Applied Physics Letters, 1966
• Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces
  IEEE Transactions on Electron Devices, 1965
• The effects of oxide traps on the MOS capacitance
  IEEE Transactions on Electron Devices, 1965
• Carrier Surface Scattering in Silicon Inversion Layers
  IBM Journal of Research and Development, 1964
• Impedance of semiconductor-insulator-metal capacitors
  Solid-State Electronics, 1964
• Behavior of CdS thin film transistors
  Solid-State Electronics, 1964