The influence of dielectric charge on the hole field-effect mobility in silicon inversion layers
- 28 August 1972
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 41 (1) , 87-88
- https://doi.org/10.1016/0375-9601(72)90646-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Hall effect measurements of hole mobility in an inversion layer at the Si-SiO2 interfacePhysica Status Solidi (a), 1971
- Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) StructuresJournal of Applied Physics, 1969
- Transport Properties of Electrons in Inverted Silicon SurfacesPhysical Review B, 1968
- SURFACE STATES IN SILICON FROM CHARGES IN THE OXIDE COATINGApplied Physics Letters, 1968
- EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERSApplied Physics Letters, 1966