Hall effect measurements of hole mobility in an inversion layer at the Si-SiO2 interface
- 16 April 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 5 (1) , 209-218
- https://doi.org/10.1002/pssa.2210050123
Abstract
No abstract availableKeywords
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- Experimental study of semiconductor surface conductivitySurface Science, 1966
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