Energy band discontinuities in heterojunctions measured by internal photoemission
- 1 September 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (5) , 503-505
- https://doi.org/10.1063/1.96107
Abstract
A novel method involving internal photoemission has been developed to determine the conduction band discontinuity Δ Ec of heterojunctions. The method is straightforward, accurate, and assumes minimum unknowns; and has been applied to GaAs/AlxGa1−xAs heterojunctions. We have found for x0.4, the apparent Δ Ec is considerably smaller.Keywords
This publication has 18 references indexed in Scilit:
- Negative charge, barrier heights, and the conduction-band discontinuity in AlxGa1−xAs capacitorsJournal of Applied Physics, 1985
- Energy band-gap discontinuities in GaAs:(Al,Ga)As heterojunctionsJournal of Applied Physics, 1985
- Determination of the valence-band discontinuity between GaAs and (Al,Ga)As by the use of p+-GaAs-(Al,Ga)As-p−-GaAs capacitorsApplied Physics Letters, 1984
- High mobility hole gas and valence-band offset in modulation-doped p-AlGaAs/GaAs heterojunctionsApplied Physics Letters, 1984
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N-n heterojunction by C-V profilingApplied Physics Letters, 1983
- Molecular beam epitaxial growth and electrical transport of graded barriers for nonlinear current conductionJournal of Vacuum Science and Technology, 1982
- Measurement of isotype heterojunction barriers by C-V profilingApplied Physics Letters, 1980
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974
- The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various TemperaturesPhysical Review B, 1931