Anomalous Hall Effect below the Magnetic-Field-Induced Metal-Insulator Transition in Narrow-Gap Semiconductors

A model is presented in which a semiconductor crystal contains an infinite metallic donor cluster as well as shallow donors which do not have close neighbors thus supporting effectively localized electronic states. The average carrier concentration in the infinite cluster is greater than the crystal-average electron concentration. The model is applied to the Hall effect below the magnetic-field-induced metal-insulator transition in ${\mathrm{Hg}}_{1-x}{\mathrm{Cd}}_x\mathrm{Te}$ and InSb.