Crystalline Defects in Selectively Epitaxial Silicon Layers
- 1 December 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (12A) , L783
- https://doi.org/10.1143/jjap.22.l783
Abstract
Crystalline defects in selectively epitaxial silicon layers have been studied as a function of growth parameters, especially growth temperature and HCl flow rate injected in the SiH2Cl2–H2 system, for (100)- and (111)-substrates. Defects, which were mostly pairs of stacking faults, were observed along the sidewall. The defect density in the epitaxial layer decreased with both increasing HCl flow rate and decreasing growth temperature. Electrical property of the epitaxial layer was also improved with decreasing growth temperature.Keywords
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